| Peering into Moore's Crystal Ball: Transistor Scaling Beyond the 15nm node | Kelin Kuhn, Intel |
| Electrical Characterization of the III-V and Oxide Interface | Suman Datta, PennStateUniversity |
| Effects of InGaAs Surface Nitridation on InGaAs MOS Interface Properties | Shinichi Takagi, University of Tokyo |
| Scaling FETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source | Massimo Fischetti, Univeristy of Texas at Dallas |
| DFT MD of Defect Passivation by Oxides on III-V and Ge Surfaces | Andrew Kummel, University of California, San Diego |
| Quantification of Trap State Densities at High-k/III-V Interfaces | Susanne Stemmer, Univ of California, Santa Barbara |
| III-V Gate Stacks on III-V: New Experimental Results | Serge Oktyabrsky, University at Albany |
| III-V on Si for VLSI | Richard Hill, SEMATECH |
| Metal Gate / High-k Reliability Characterization: From Research to Development and Manufacturing | Andres Kerber, GLOBALFOUNDRIES |
| Understanding of Post-Breakdown Reliability of High-? Gate Dielectric Stacks Using Physical Analysis Techniques | Kin Leong Pey, Singapore University of Technology and Design |
| Defect Depth Profiling of Gate Dielectric - Some Controversial Points | Kin Wah (Charles) Cheung, NIST |
| III-V Gate Stack Electrical Characterization | Thomas Hoffmann , IMEC |
| RRAM Technology From an Industrial Perspective | In-Gyu Baek , Samsung |
| Charge Trap Memories and 3D Approaches | Gabriel Molas, CEA-LETI |
| A Survey of Cross Point Phase Change Memory Technologies | DerChang Kau, Intel Corporation |
| Recent Advancements in Spin-Torque
Switching for High-Density MRAM | John Slaughter, Everspin |
| STT MRAM with High Thermal Stability | Bernard Diény, SPINTEC |
| Status and Challenges for Non-Volatile Spin-Transfer Torque RAM (STT-RAM) | Mohamad Krounbi, Grandis |
| Progress in Metal Oxide RRAM | David Gilmer, SEMATECH |
| Electrical and Reliability Characteristics of RRAM forCross-point Memory Applications | Hyunsang Hwang, Gwangju Institute of Science and Technology (GIST), KOREA |
| Investigation of RRAM Devices for Radiation Harden Applications | Wei Wang, University at Albany |
Basics of RRAM based on transition metal oxides
|
Hisashi Shima, Nanodevice Innovation Research Center |
| Oxides / Metals for Spin Based Nanoelectronics | Kang Wang, University of California, Los Angeles |
| Magneto-Electric Coupling at Oxide Interfaces | Alex Demkov, University of Texas at Austin |
| Tunnel FET Gate-Stack Characterization | Alan Seabaugh, University of Notre Dame |